20N06
20N06 is N-Channel MOSFET manufactured by onsemi.
Features
- Lower RDS(on)
- Lower VDS(on)
- Lower Capacitances
- Lower Total Gate Charge
- Lower and Tighter VSD
- Lower Diode Reverse Recovery Time
- Lower Reverse Recovery Stored Charge
- NTDV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101
Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
Typical Applications
- Power Supplies
- Converters
- Power Motor Controls
- Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain- to- Source Voltage
Drain- to- Gate Voltage (RGS = 10 MW)
Gate- to- Source Voltage
- Continuous
- Non- repetitive (tpv10 ms)
Drain Current
- Continuous @ TA = 25°C
- Continuous @ TA = 100°C
- Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS VDGR
VGS VGS
ID ID IDM PD
TJ, Tstg
60 60
±20 ±30
20 10 60 60 0.40 1.88 1.36
- 55 to...
