Datasheet4U Logo Datasheet4U.com

25N05 - N-Channel MOSFET

Key Features

  • Drain Current ID= 25A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 50V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max).
  • Fast Switching.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
25N01GVSFIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Winbond
25N01GVSFIT 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Winbond
25N01GVTBIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Winbond
25N01GVTBIT 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Winbond
25N01GVTCIG 3V 1G-BIT SERIAL SLC NAND FLASH MEMORY Winbond

Other Datasheets by Inchange Semiconductor

Part Number Description
25N06 N-Channel MOSFET
25N18 N-Channel MOSFET
25N20 N-Channel MOSFET
25N40 N-Channel MOSFET
25N60 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 25N05 ·FEATURES ·Drain Current ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.065Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching regulators ·Switching converters,motor drivers,relay drivers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 50 ±30 V V ID Drain Current-Continuous 25 A IDM Drain Current-Single Plused 80 A PD Total Dissipation @TC=25℃ 60 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.25 ℃/W isc website：www.