25N06 Datasheet | UMW

Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the Ro HS standard. Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switch circuit of adaptor and charger; LED backlight driver; Synchronousrectification Package Marking and Ordering Information Device Marking Device Device Package UMW 25N06 UMW 25N06 TO-252 Reel Size 330mm Tape width 12mm Quantity 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Drain-Source Voltage Gate-Source Voltage ±20 Continuous Drain Current TC=25℃ ID TC=100℃ Pulsed Drain Current 1) Single Puise Avalanche Energy 2) 25 17.5 100 56.2 Maximum Power Dissipation Storage Temperature Range TC=25℃ PD TSTG 36.2 -55 to +150 Operating Junction Temperature Range -55 to...