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25N06 - 60V N-Channel Power Mosfet

General Description

and low gate charge.

Which accords with the RoHS standard.

Key Features

  • VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test.

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Datasheet Details

Part number 25N06
Manufacturer UMW
File Size 774.95 KB
Description 60V N-Channel Power Mosfet
Datasheet download datasheet 25N06 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW R UMW 25N06 60V N-Channel Power Mosfet General Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard. Features VDS = 60V,ID =25A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.