25N06 Datasheet | Unisonic Technologies

DESCRIPTION The UTC 25N06 is an N-channel enhancement mode Power MOSFET, which provides low gate charge, avalanche rugged technology, and so on. The UTC 25N06 is universally applied in DC-DC & DC-AC converters, motor control, high current, high speed switching, solenoid and relay drivers, regulators, audio amplifiers, automotive environment. - FEATURES - Low Gate Charge - RDS(on) = 0.048 Ω (TYP.) - Avalanche Rugged Technology - 100% Avalanche Tested - Repetitive Avalanche at 100°C - High Current Capability - Operating Temperature: 175°C - Application Oriented Characterization - SYMBOL 2.Drain 1.Gate 3.Source - ORDERING INFORMATION Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 25N06L-TA3-T 25N06G-TA3-T Note: G: Gate, D: Drain, S: Source .. .unisonic..tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-450.a - Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage (VGS=0) VDS 60 V Drain-Gate Voltage (RGS=20kΩ) VDGR 60 V Gate-Source Voltage VGS ± 20 V TC=25°C 25 A Drain Current (Continuous) ID TC=100°C 17 A Drain Current (Pulsed) (Note 2) IDM 100 A Single Pulse Avalanche Energy EAS 100 m J (starting TJ =25°C, ID =25A, VDD =25 V) Total Dissipation at TC=25°C PD 90 W Maximum Operating Junction Temperature TJ 175 °C Storage Temperature TSTG -65 ~ +175 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width limited by safe operating area - THERMAL DATA SYMBOL θJA θJC RATINGS 62.5 1.57 UNIT °C/W °C/W PARAMETER Junction to Ambient Junction to Case .. UNISONIC TECHNOLOGIES CO., LTD .unisonic..tw 2 of 6 QW-R502-450.a - PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current (VGS=0) Gate- Source Leakage Current (VDS=0) ON CHARACTERISTICS...