2N3055H - Silicon NPN Power Transistor

Product Overview

Inchange Semiconductor

Datasheet Details

Part number	2N3055H
Manufacturer	Inchange Semiconductor
File Size	31.70 KB
Description	Silicon NPN Power Transistor
Datasheet	2N3055H Datasheet
Additional preview pages of the 2N3055H datasheet.

Product details

Description

Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS Designed for general-purpose switching and amplifier Applications.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCER Collector-Emitter Voltage 70 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7V IC Collector Current-Continuous 15 A IB Base Curr

📁 Similar Datasheet

2N3055HV - NPN Power Transistor (CDIL)
2N3055 - COMPLEMENTARY SILICON POWER TRANSISTORS (STMicroelectronics)
2N3055A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS (Motorola Inc)
2N3055AG - Complementary Silicon High-Power Transistors (ON Semiconductor)
2N3055B - NPN Transistor (INCHANGE)
2N3055E - Bipolar NPN Device (Semelab Plc)
2N3055ESMD - Bipolar NPN Device (Semelab Plc)
2N3055G - Complementary Silicon Power Transistors (ON Semiconductor)

Other Datasheets by Inchange Semiconductor

2N3053 - Silicon NPN Power Transistor
2N3054 - Silicon NPN Power Transistors
2N3054A - Silicon NPN Power Transistors
2N3019 - Silicon NPN Power Transistor
2N3171 - Silicon PNP Power Transistor
2N3172 - Silicon PNP Power Transistor

Published: Jun 13, 2015 |