Datasheet4U Logo Datasheet4U.com

2N3055H - Silicon NPN Power Transistor

General Description

Excellent Safe Operating Area DC Current Gain-hFE=20-70@IC = 4A Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS

Applications.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N3055H 15A Power Transistors Multicomp
2N3055H Silicon Power Transistor USHA
2N3055H Power Transistor Seme LAB
2N3055HV NPN Power Transistor CDIL
2N3055HV NPN POWER TRANSISTOR TRANSYS Electronics Limited

Other Datasheets by Inchange Semiconductor

Part Number Description
2N3053 Silicon NPN Power Transistor
2N3054 Silicon NPN Power Transistors
2N3054A Silicon NPN Power Transistors
2N3019 Silicon NPN Power Transistor
2N3171 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N3055H DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS ·Designed for general-purpose switching and amplifier Applications.