Part 2N4902
Description Silicon PNP Power Transistors
Category Transistor
Manufacturer Inchange Semiconductor
Size 95.64 KB
Inchange Semiconductor

2N4902 Overview

Description

¡¤With TO-3 package ¡¤Complement to type 2N5067/5068/5069 ¡¤Low collector saturation voltage APPLICATIONS ¡¤For general–purpose switching and power amplifier applications. PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION SYMBOL PARAMETER CONDITIONS 2N4901 VALUE -40 UNIT VCBO Collector-base voltage 2N4902 2N4903 2N4901 Open emitter -60 -80 -40 V VCEO Collector-emitter voltage 2N4902 2N4903 Open base -60 -80 V VEBO IC ICM IB PD Tj Tstg Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature Open collector -5 -5 -10 -1 V A A A W ¡æ ¡æ TC=25¡æ 87.5 200 -65~200 SYMBOL Rth j-c PARAMETER Datasheet pdf - Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25¡æ unless otherwise specified PARAMETER 2N4901 VCEO(SUS) Collector-emitter sustaining voltage 2N4902 2N4903 VCEsat-1 VCEsat-2 VBE ICEO ICBO ICEX IEBO hFE-1 hFE-2 fT Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency IC=-1A; IB=-0.1A IC=-5A ;IB=-1A IC=-1A ; VCE=-2V IC=-0.2A ;IB=0 2N4901 2N4902 2N4903 SYMBOL CONDITIONS MIN -40 -60 -80 TYP.