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2N4902X Datasheet Silicon PNP Power Transistors

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistors.

General Description

·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 20-100 @IC= -1A isc Product Specification 2N4902X APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak -10 A IB Base Current-Continuous -1 A PC Collector Power Dissipation@TC=25℃ 87.5 W TJ Junction Temperature Tstg Storage Temperature 200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 2.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N4902X ELECTRICA

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