Datasheet4U Logo Datasheet4U.com

2N5684 - Silicon PNP Power Transistors

Datasheet Summary

Description

High DC Current Gain-hFE=15~60@IC = -25A Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS

circuits applications.

📥 Download Datasheet

Datasheet preview – 2N5684

Datasheet Details

Part number 2N5684
Manufacturer Inchange Semiconductor
File Size 137.25 KB
Description Silicon PNP Power Transistors
Datasheet download datasheet 2N5684 Datasheet
Additional preview pages of the 2N5684 datasheet.

📁 Similar Datasheet

  • 2N5684 - PNP Transistor (ON Semiconductor)
  • 2N5684 - PNP High Power Silicon Transistor (VPT)
  • 2N5684 - NPN POWER SILICON TRANSISTOR (Microsemi)
  • 2N5684 - High-Current Complementary Silicon Power Transistors (Motorola)
  • 2N5680 - PNP SILICON TRANSISTORS (Seme LAB)
  • 2N5680 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
  • 2N5680 - GENERAL PURPOSE TRANSISTOR (Motorola)
  • 2N5680 - PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS (CDIL)
  • 2N5680 - PNP Silicon Amplifier (VPT)
  • 2N5680 - PNP Power Silicon Transistor (MA-COM)
Other Datasheets by Inchange Semiconductor
  • 2N5686 - Silicon NPN Power Transistors
  • 2N5039 - Silicon NPN Power Transistors
  • 2N5240 - Silicon NPN Power Transistor
  • 2N5301 - Silicon NPN Power Transistors
  • 2N5303 - Silicon NPN Power Transistors
  • 2N5344 - Silicon PNP Power Transistor
  • 2N5401 - Silicon PNP Power Transistor
  • 2N5415 - Silicon PNP Power Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5684 DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -15 A PC Collector Power Dissipation @TC=25℃ -300 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.584 ℃/W isc website：www.iscsemi.
Published: |