2N5684 - Silicon PNP Power Transistors

Inchange Semiconductor

General Description

High DC Current Gain-hFE=15~60@IC = -25A Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS

circuits applications.

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2N5684 silicon pnp power transistors by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	2N5684
Manufacturer	Inchange Semiconductor
File Size	137.25 KB
Description	Silicon PNP Power Transistors
Datasheet	2N5684 Datasheet

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INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2N5684 DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = -25A ·Low Saturation Voltage- VCE(sat)= -1.0V(Max)@ IC = -25A APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -50 A IB Base Current-Continuous -15 A PC Collector Power Dissipation @TC=25℃ -300 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.584 ℃/W isc website：www.iscsemi.