Datasheet4U Logo Datasheet4U.com

2N5686 - Silicon NPN Power Transistors

Datasheet Summary

Description

High DC Current Gain-hFE=15~60@IC = 25A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A

robust device performance and reliable operation.

circuits applications.

📥 Download Datasheet

Datasheet preview – 2N5686

Datasheet Details

Part number 2N5686
Manufacturer Inchange Semiconductor
File Size 135.20 KB
Description Silicon NPN Power Transistors
Datasheet download datasheet 2N5686 Datasheet
Additional preview pages of the 2N5686 datasheet.

📁 Similar Datasheet

  • 2N5686 - NPN HIGH POWER SILICON TRANSISTOR (VPT)
  • 2N5686 - Silicon NPN Transistor (NTE)
  • 2N5686 - NPN Transistor (ON Semiconductor)
  • 2N5686 - NPN POWER SILICON TRANSISTOR (Microsemi)
  • 2N5686 - High-Current Complementary Silicon Power Transistors (Motorola)
  • 2N5680 - PNP SILICON TRANSISTORS (Seme LAB)
  • 2N5680 - COMPLEMENTARY SILICON POWER TRANSISTORS (Central Semiconductor)
  • 2N5680 - GENERAL PURPOSE TRANSISTOR (Motorola)
  • 2N5680 - PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS (CDIL)
  • 2N5680 - PNP Silicon Amplifier (VPT)
Other Datasheets by Inchange Semiconductor
  • 2N5684 - Silicon PNP Power Transistors
  • 2N5039 - Silicon NPN Power Transistors
  • 2N5240 - Silicon NPN Power Transistor
  • 2N5301 - Silicon NPN Power Transistors
  • 2N5303 - Silicon NPN Power Transistors
  • 2N5344 - Silicon PNP Power Transistor
  • 2N5401 - Silicon PNP Power Transistor
  • 2N5415 - Silicon PNP Power Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5686 DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = 25A ·Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications.
Published: |