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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2N5686
DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = 25A ·Low Saturation Voltage-
VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for
robust device performance and reliable operation.
APPLICATIONS ·Designed for use in high power amplifer and switching
circuits applications.