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2N5686 - Silicon NPN Power Transistors

General Description

High DC Current Gain-hFE=15~60@IC = 25A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A

robust device performance and reliable operation.

circuits applications.

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5686 DESCRIPTION ·High DC Current Gain-hFE=15~60@IC = 25A ·Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Designed for use in high power amplifer and switching circuits applications.