Datasheet Details
| Part number | 2N5680 |
|---|---|
| Manufacturer | CDIL |
| File Size | 135.80 KB |
| Description | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| Datasheet | 2N5680 2N5679 Datasheet (PDF) |
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Overview: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified pany PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | 2N5680 |
|---|---|
| Manufacturer | CDIL |
| File Size | 135.80 KB |
| Description | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| Datasheet | 2N5680 2N5679 Datasheet (PDF) |
|
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SYMBOL 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 Collector -Base Voltage VCBO 100 120 Emitter -Base Voltage VEBO 4.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation @Ta=25 degC PD 1.0 Derate Above 25deg C 5.7 Power Dissipation @Tc=25 degC PD 10 Derate Above 25deg C 57 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 17.5 Junction to Ambient Rth(j-a) 175 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO(sus) IC=10mA,IB=0 >100 >120 Collector-Cut off Current ICBO VCB=100V, IE=0 <1.0 - VCB=120V, IE=0 - <1.0 ICEO VCE=70V, IB=0 <10 - VCE=80V, IB=0 - <10 ICEX VCE=100V,VEB=1.5V <1.0 - VCE=120V,VEB=1.5V - <1.0 Emitter-Cut off Current TC=150 deg C VCE=100V,VEB=1.5V <1.0 - VCE=120V,VEB=1.5V - <1.0 IEBO VEB=4V, IC=0 <1.0 <1.0 UNITS V V V A A W mW/deg C W mW/deg C deg C deg C/W deg C/W UNITS V uA uA uA uA uA uA mA mA uA Continental Device India Limited Data Sheet Page 1 of 3 ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5681 DC Current Gain hFE* IC=1A,VCE=2V >5.0 IC=250mA,VCE=2V 40-150 Collector Emitter Saturation Voltage VCE(Sat)* IC=250mA,IB=25mA <0.60 IC=500mA,IB=50mA <1.0 IC=1A, IB=200mA <2,0 Base Emitter on Voltage VBE(on)* IC=250mA,VCE=2V <1.0 2N5679-82 2N5680 2N5682 40-150 <0.60 <1.0 <2.0 <1.0 SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain hfe IC=200mA, VCE=1.5V >20 >20 f=1kHz Out-Put
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2N5680 | PNP SILICON TRANSISTORS | Seme LAB |
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2N5680 | COMPLEMENTARY SILICON POWER TRANSISTORS | Central Semiconductor |
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2N5680 | GENERAL PURPOSE TRANSISTOR | Motorola |
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2N5680 | PNP Silicon Amplifier | VPT |
 |
2N5680 | PNP Power Silicon Transistor | MA-COM |
| Part Number | Description |
|---|---|
| 2N5681 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N5682 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N5679 | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| 2N5086 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5087 | PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
| 2N5088 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5089 | NPN SILICON EPITAXIAL TRANSISTORS |
| 2N5294 | NPN PLASTIC POWER TRANSISTOR |
| 2N5296 | NPN PLASTIC POWER TRANSISTOR |
| 2N5298 | NPN PLASTIC POWER TRANSISTOR |