Continental Device India 2N5682
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
| Part No. | 2N5682 |
|---|---|
| Datasheet | 2N5682 Download |
| Manufacturer |  Continental Device India |
| Description | PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
.DESCRIPTION
SYMBOL 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO 100 120 Collector -Base Voltage VCBO 100 120 Emitter -Base Voltage VEBO 4.0 Collector Current Continuous IC 1.0 Base Current IB 0.5 Power Dissipation @Ta=25 degC PD 1.0 Derate Above 25deg C 5.7 Power Dissipation @Tc=25 degC PD 10 Derate Above 25deg C 57 Operating And Storage Junction Tj, Tstg -65 to +200 Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) 17.5 Junction to Ambient Rth(j-a) 175ELECTRICAL CHARACTERISTICS
(Ta=25 deg C Unless Otherwise Specified)DESCRIPTION
SYMBOL TEST CONDITION 2N5679 2N5680 2N5681 2N5682 Collector -Emitter Voltage VCEO(sus) IC=10mA,IB=0 >100 >120 Collector-Cut off Current ICBO VCB=100V, IE=0 <1.0 - VCB=120V, IE=0 - <1.0 ICEO VCE=70V, IB=0 <10 - VCE=80V, IB=0 - <10 ICEX VCE=100V,VEB=1.5V <1.0 - VCE=120V,VEB=1.5V - <1.0 Emitter-Cut off Current TC=150 deg C VCE=100V,VEB=1.5V <1.0 - VCE=120V,VEB=1.5V - <1.0 IEBO VEB=4V, IC=0 <1.0 <1.0 UNITS V...
