Microsemi 2N5682
NPN POWER TRANSISTOR
| Part No. | 2N5682 |
|---|---|
| Datasheet | 2N5682 Download |
| Manufacturer |  Microsemi |
| Description | NPN POWER TRANSISTOR |
| Buy | Stock & Price |
MAXIMUM RATINGS
(TA = 25° C unless otherwise noted) 2N5681 Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C(1) @ TC = +250C(2) Operating & Storage Temperature Range VCEO VCBO VEBO IC IB PT Top, Tstg Symbol RθJC 100 100 4.0 1.0 0.5 1.0 10 -65 to +200 2N5682 120 120 4.0 1.0 0.5 1.0 10 -65 to +200 Units Vdc Vdc Vdc Adc Adc W W °C Unit 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 57 mW/0C for TC > +250C Max. 17.5 TO-39* (TO-205AD) *See appendix A for package outlineELECTRICAL CHARACTERISTICS
(TA = 250C unless otherwise noted) Characteristics Symbol Min. 100 120 1.0 10 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc 2N5681 2N5682 Emitter-Base Cutoff Current VEB = 4.0 Vdc Collector-Emitter Cutoff Current VCE = 70 Vdc 2N5681 VCE = 80 Vdc 2N5682 Collector-Emitter...