STMicroelectronics 2N5682
The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching applications. The complementary PNP types are the 2N5679 and 2N5680 respectively.APPLICATIONS
GENERAL PURPOSE SWITCHING s GENERAL PURPOSE AMPLIFIERS sDESCRIPTION
TO-39 INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC IB P tot P tot T stg Tj Parameter 2N5680 Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Base Current Total Dissipation at T c ≤ 25 o C Total Dissipation at T amb ≤ 50 o C Storage Temperature Max. Operating Junction Temperature 100 100 4 1 0.5 10 1 -65 to 200 200 Value 2N5682 120 120 V V V A A W W o o Unit C C July 1997 1/4 2N5681 / 2N5682 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 17.5 175 o o C/W C/WELECTRICAL CHARACTERISTICS
(Tcase = 25 oC unless otherwise specified) Symbol I CEV Parameter Collector Cut-off Current (V BE = -1.5V) Test Conditions for 2N5681 for 2N568 2 T c = 150 o C for 2N5681 for 2N5682 for 2N5681 for 2N5682 for 2N5681 for 2N5682 V EB = 4 V I C = 10 mA for 2N5681 f...