Datasheet Details
| Part number | 2N5971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 134.68 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N5971-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product.
| Part number | 2N5971 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 134.68 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | 2N5971-InchangeSemiconductor.pdf |
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 5A ·Excellent Safe Operating Area APPLICATIONS ·Designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 15 A PC Collector Power Dissipation @TC=25℃ 150 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website：.iscsemi.
1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N5971 ELECTRICAL CH
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2N5971 | Bipolar NPN Device | Seme LAB |
| Part Number | Description |
|---|---|
| 2N5929 | Silicon NPN Power Transistors |
| 2N5930 | Silicon NPN Power Transistors |
| 2N5931 | Silicon NPN Power Transistors |
| 2N5932 | Silicon NPN Power Transistors |
| 2N5933 | Silicon NPN Power Transistors |
| 2N5934 | Silicon NPN Power Transistors |
| 2N5935 | Silicon NPN Power Transistors |
| 2N5936 | Silicon NPN Power Transistors |
| 2N5937 | Silicon NPN Power Transistors |
| 2N5039 | Silicon NPN Power Transistors |