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2N6767 Datasheet

Manufacturer: Inchange Semiconductor
2N6767 datasheet preview

2N6767 Details

Part number 2N6767
Datasheet 2N6767-InchangeSemiconductor.pdf
File Size 41.41 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET Transistor
2N6767 page 2

2N6767 Overview

·VGS Rated at ±20V ·Silicon Gate for fast switching speeds ·IDSS 、RDS(ON) ,specified at elevated temperature ·Low drive requirements APPLICATIONS designed for high power ,high speed application ,such as switching applies,UPS,AC and DC motor controls , relay and high energy pulse circuits. RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source Voltage (VGS=0) 350 V Gate-Source Voltage ±20 V...

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