High Voltage and High Current
Vceo=-50V(Min.），Ic=-150mA(Max)
Excellent hFE Linearity
Low Noise
Complement to Type 2SC1815
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Audio frequency general purpose amplifier Applicatio
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
`
isc Silicon PNP Transistor
DESCRIPTION ·High Voltage and High Current
Vceo=-50V(Min.），Ic=-150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SC1815 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Audio frequency general purpose amplifier Applications ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Curren
IB
Base Curren
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2SA1015
VALUE
UNIT
-50
V
-50
V
-5
V
-150
mA
-50
mA
400
mW
125
℃
-55~125
℃
isc website： www.iscsemi.
2SA1015 Datasheet
