2SA1041 Description
·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·plement to Type 2SC2431 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage switching systems. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1041 Tj=25℃ unless otherwise specified SYMBOL...