Datasheet4U Logo Datasheet4U.com

2SA1042 - Silicon PNP Power Transistor

General Description

High Current Capability Good Linearity of hFE Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min.) Complement to Type 2SC2432 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed, high voltage swi

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SA1042 Silicon High Speed Power Transistor Fujitsu
2SA104 Ge PNP Drift Transistor ETC
2SA1041 Silicon POwer Transistors SavantIC
2SA1041 Silicon High Speed Power Transistor Fujitsu
2SA1043 Silicon POwer Transistors SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SA1040 Silicon PNP Power Transistors
2SA1041 POWER TRANSISTOR
2SA1043 POWER TRANSISTOR
2SA1044 POWER TRANSISTOR
2SA1001 Silicon PNP Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon PNP Power Transistor 2SA1042 DESCRIPTION ·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min.) ·Complement to Type 2SC2432 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage switching systems. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 100 W 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.iscsemi.