Datasheet Details
| Part number | 2SA1042 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.52 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1042-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1042.
| Part number | 2SA1042 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.52 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1042-InchangeSemiconductor.pdf |
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·High Current Capability ·Good Linearity of hFE ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -70V(Min.) ·Complement to Type 2SC2432 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high speed, high voltage switching systems.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -70 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 A 100 W 175 ℃ Tstg Storage Temperature -65~175 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1042 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA;
Compare 2SA1042 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1042 | Silicon High Speed Power Transistor | Fujitsu |
| Part Number | Description |
|---|---|
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| 2SA1041 | POWER TRANSISTOR |
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| 2SA1044 | POWER TRANSISTOR |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1011 | POWER TRANSISTOR |