2SA1065 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·plement to Type 2SC2489 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for AF amplifier, high power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL...