2SA1067
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage
- High transition frequency APPLICATIONS
- For audio and general purpose amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -120 -120 -5 -10 -14 100 150 -65~150 UNIT V V V A A W
Savant IC Semiconductor
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Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
SYMBOL
TYP.
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=-25m A ;IB=0
-120
VCEsat
Collector-emitter saturation voltage
IC=-5A ;IB=-0.5A
-2.0
VBEsat
Base-emitter...
