2SA1063
DESCRIPTION
- With TO-3 package
- Low collector saturation voltage
- High transition frequency APPLICATIONS
- Designed for general purpose switching and amplifier applications
PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION
Absolute maximum ratings(Ta= )
SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -6 -6 -10 80 150 -65~150 UNIT V V V A A W
Savant IC Semiconductor
..
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
SYMBOL
TYP.
UNIT
V(BR)CEO VCEsat VBE ICBO IEBO h FE-1 h FE-2 f T
Collector-emitter breakdown voltage
IC=-25m A ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-150V; IE=0 VEB=-3V;...
