Datasheet Details
| Part number | 2SA1080 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.15 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1080-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor 2SA1080.
| Part number | 2SA1080 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 214.15 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1080-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Good Linearity of hFE ·plement to Type 2SC2530 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1080 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
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| 2SA1007 | Silicon PNP Power Transistor |
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| 2SA1011 | POWER TRANSISTOR |
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| 2SA1021 | POWER TRANSISTOR |
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