Datasheet Details
| Part number | 2SA1082 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 208.05 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1082-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Transistor.
| Part number | 2SA1082 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.05 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1082-InchangeSemiconductor.pdf |
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·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design For Amplifier and general purpose applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -100 mA PD Collector Power Dissipation@TA=25℃ 400 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1082 isc website:.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Transistor 2SA1082 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CES Collector-Emitter Breakdown Voltage IC= -10μA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
| 2SA1082 | Silicon PNP Transistor | Hitachi Semiconductor | |
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2SA1082 | PNP Plastic Encapsulated Transistor | SeCoS |
| Part Number | Description |
|---|---|
| 2SA1080 | Silicon PNP Power Transistor |
| 2SA1001 | Silicon PNP Power Transistor |
| 2SA1003 | Silicon PNP Power Transistor |
| 2SA1007 | Silicon PNP Power Transistor |
| 2SA1008 | POWER TRANSISTOR |
| 2SA1009 | Silicon PNP Power Transistor |
| 2SA1011 | POWER TRANSISTOR |
| 2SA1015 | Silicon PNP Power Transistors |
| 2SA1021 | POWER TRANSISTOR |
| 2SA1028 | Silicon PNP Power Transistor |