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2SA1082 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Transistor.

General Description

·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design For Amplifier and general purpose applications .

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -100 mA PD Collector Power Dissipation@TA=25℃ 400 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1082 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Transistor 2SA1082 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CES Collector-Emitter Breakdown Voltage IC= -10μA;

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