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2SA1082 - Silicon PNP Power Transistor

General Description

High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

Design For Amplifier and general purpose applications .

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isc Silicon PNP Transistor DESCRIPTION ·High Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Design For Amplifier and general purpose applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -100 mA PD Collector Power Dissipation@TA=25℃ 400 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1082 isc website：www.iscsemi.