| Part Number | 2SA1082 |
|---|---|
| Manufacturer | Hitachi Semiconductor |
| Overview |
2SA1025, 2SA1081, 2SA1082
Silicon PNP Epitaxial
Application
• Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
.
* Typ Max * * * * * * * * * * *0.1 *0.1 800 *0.2 2SA1082 Min Typ Max * * * *0.1 *0.1 800 *0.2 V V Unit Test conditions V V µA µA IC = *10 µA, IE = 0 IC = *1 mA, RBE = ∞ IE = *10 µA, IC = 0 VCB = *50 V, I E = 0 VEB = *2 V, IC = 0 VCE = *12 V, IC = *2 mA IC = *10 mA, IB = *1 mA VCE = *12 V, IC = *2 m. |
2SA1082 Datasheet
The 2SA1082 is a Silicon PNP Transistor.
| Part Number | 2SA1082 |
|---|---|
| Description | Silicon PNP Power Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·High Voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Design For Amplifier and general purpose applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25.
0mA ; IB= -1mA
VBE(on) Base-Emitter On Voltage
IC= -2mA ; VCE= -12V
ICBO
Collector Cutoff Current
VCB= -50V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -2V; IC= 0
hFE
DC Current Gain
IC=-2mA ; VCE= -12V
fT
Current-Gain *Bandwidth Product IC= -2mA; VCE= -12V; f= 1MHz Cob Output Capacitance . |
| Part Number | 2SA1082 |
|---|---|
| Description | PNP Plastic Encapsulated Transistor |
| Manufacturer | SeCoS Halbleitertechnologie GmbH |
| Overview |
Elektronische Bauelemente
2SA1082
-0.1 A , -120 V PNP Plastic Encapsulated Transistor
FEATURES
Low Frequency Amplifier
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
TO-92.
* Low Frequency Amplifier RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 CLASSIFICATION OF hFE Product-Rank 2SA1082-D Range 250-500 2SA1082-E 400-800 GH J AD B K E CF Emitter Collector *Base REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.. |