Datasheet Summary
INCHANGE Semiconductor isc Silicon PNP Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
V(BR)CEO= -140V(Min)
- Good Linearity of hFE
- High Power Dissipation
- plement to Type 2SC2581
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio and general purpose...
