| Part number | 2SA1169 |
|---|---|
| Datasheet | 2SA1169_InchangeSemiconductor.pdf |
| File Size | 219.71 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·plement to Type 2SC2773 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC...
See all Inchange Semiconductor datasheets
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| 2SA1166 | POWER TRANSISTOR |
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| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |
