Datasheet Details
| Part number | 2SA1169 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.71 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1169 Download (PDF) |
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| Part number | 2SA1169 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 219.71 KB |
| Description | POWER TRANSISTOR |
| Download | 2SA1169 Download (PDF) |
|
|
|
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2SC2773 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 150 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1169 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA;
isc Silicon PNP Power Transistor 2SA1169.
| Part Number | Description |
|---|---|
| 2SA1166 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |