2SA1170 datasheet by Inchange Semiconductor.
| Part number | 2SA1170 |
|---|---|
| Datasheet | 2SA1170_InchangeSemiconductor.pdf |
| File Size | 217.96 KB |
| Manufacturer | Inchange Semiconductor |
| Description | POWER TRANSISTOR |
|
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·plement to Type 2SC2774 APPLICATIONS ·Designed for power amplifier and general purpose applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1170 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
| 2SA1173 | Silicon PNP Power Transistor |
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| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |
