2SA1170 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-50mA ; IC=0 IC=-10A ;IB=-1A VCB=-200V; VCE=-12V 20 MIN -200 -6 2SA1170 SYMBOL V(BR)CEO V(BR)EBO VCEsat...