Datasheet Details
| Part number | 2SA1173 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 78.55 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1173-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor.
| Part number | 2SA1173 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 78.55 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1173-InchangeSemiconductor.pdf |
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·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min) ·Good Linearity of hFE ·Low Saturation Voltage APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -140 -5 -0.05 2 150 -55~150 V V A W ℃ ℃ isc Product Specification 2SA1173 isc website：.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1173 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -20mA;
IB= -2mA VBE(sat) Base-Emitter Saturation Voltage IC= -20mA;
IB= -2mA ICBO Collector Cutoff Current VCB= -140V;
| Part Number | Description |
|---|---|
| 2SA1170 | POWER TRANSISTOR |
| 2SA1102 | POWER TRANSISTOR |
| 2SA1103 | POWER TRANSISTOR |
| 2SA1104 | POWER TRANSISTOR |
| 2SA1105 | POWER TRANSISTOR |
| 2SA1106 | POWER TRANSISTOR |
| 2SA1107 | POWER TRANSISTOR |
| 2SA1108 | POWER TRANSISTOR |
| 2SA1109 | POWER TRANSISTOR |
| 2SA1110 | POWER TRANSISTOR |