Datasheet Details
| Part number | 2SA1232 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.69 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1232_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1232 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 221.69 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1232_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min) ·Good Linearity of hFE ·plement to Type 2SC3012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -130 V VCEO Collector-Emitter Voltage -130 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -15 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1232 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1232 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1232 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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