Datasheet Details
| Part number | 2SA1280 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.39 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1280_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1280 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.39 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1280_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1.5 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1280 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1280 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA1280 | SILICON POWER TRANSISTOR | SavantIC |
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|---|---|
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