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2SA1288 Datasheet Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor 2SA1288.

General Description

·Low Collector Saturation Voltage ·Large Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifiers ·Switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:.iscsemi.

isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A;

IB= -75mA ICBO Collector Cutoff Current VCB= -40V;

2SA1288 Distributor