2SA1359 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·plement to Type 2SC3422 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1359 TC=25℃ unless otherwise specified SYMBOL...
