Datasheet Details
| Part number | 2SA1359 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1359_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1359 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 196.41 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA1359_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V (Min) ·Good Linearity of hFE ·plement to Type 2SC3422 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency power amplifier and low speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -1 A 1.5 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1359 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA1359 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1359 | Silicon PNP Transistor | Toshiba Semiconductor |
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2SA1359 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1352 | Silicon PNP Power Transistor |
| 2SA1355 | POWER TRANSISTOR |
| 2SA1357 | Silicon PNP Power Transistor |
| 2SA1358 | Silicon PNP Power Transistor |
| 2SA1301 | Silicon PNP Power Transistor |
| 2SA1302 | Silicon PNP Power Transistor |
| 2SA1303 | POWER TRANSISTOR |
| 2SA1304 | POWER TRANSISTOR |
| 2SA1305 | POWER TRANSISTOR |
| 2SA1308 | POWER TRANSISTOR |