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2SA1359 - Silicon PNP Transistor

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Part number 2SA1359
Manufacturer Toshiba
File Size 130.33 KB
Description Silicon PNP Transistor
Datasheet download datasheet 2SA1359 Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1359 Audio Frequency Power Amplifier Low-Speed Switching 2SA1359 Unit: mm • Suitable for the output stage of 5-watt car radios and car stereos. • Good hFE linearity • Complementary to 2SC3422. Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg −40 −40 −5 −3 −1 1.5 10 150 −55 to 150 V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-8H1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.82 g (typ.