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2SA1507 - Silicon PNP Power Transistor

General Description

High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) Large Current Capacity Complement to Type 2SC3902 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in color TV audio output, converters and invert

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isc Silicon PNP Power Transistor 2SA1507 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3902 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in color TV audio output, converters and inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6.0 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2.5 A 1.5 W 10 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website： www.iscsemi.