2SA1507 Datasheet and Specifications PDF

The 2SA1507 is a PNP / NPN Epitaxial Planar Silicon Transistors.

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Part Number2SA1507 Datasheet
ManufacturerSANYO
Overview Ordering number : EN2101D 2SA1507 / 2SC3902 SANYO Semiconductors DATA SHEET 2SA1507 / 2SC3902 Applications • PNP / NPN Epitaxial Planar Silicon Transistors 160V / 1.5A Switc.
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* High breakdown voltage. Large current capacity. Adoption of FBET and MBIT process. The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902. Specifications ( ) : 2SA1507 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Coll.
Part Number2SA1507 Datasheet
DescriptionBipolar Transistor
Manufactureronsemi
Overview Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters .
* High breakdown voltage
* Large current capacity
* Adoption of FBET and MBIT process
* The plastic-covered heat sink eliminates the need for an insulator when mounting the 2SA1507/2SC3902 Specifications ( ): 2SA1507 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Colle.
Part Number2SA1507 Datasheet
DescriptionSWITCHING TRANSISTOR
ManufacturerUnisonic Technologies
Overview UNISONIC TECHNOLOGIES CO., LTD 2SA1507 PNP SILICON TRANSISTOR SWITCHING TRANSISTOR „ APPLICAITONS * Color TV audio output, converters, inverters „ FEATURES * High breakdown voltage * Large current. * High breakdown voltage * Large current capacitance * High-speed switching
* ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SA1507L-T60-K 2SA1507G-T60-K Note: Pin Assignment: E: Emitter C: Collector B: Base Package TO-126 Pin Assignment 123 ECB Packing Bulk 2SA1507G-T60-K .
Part Number2SA1507 Datasheet
DescriptionSilicon PNP Power Transistor
ManufacturerInchange Semiconductor
Overview ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V (Min) ·Large Current Capacity ·Complement to Type 2SC3902 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. ltage IC= -10μA; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= -10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA ICBO Collector Cut.