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isc Silicon PNP Power Transistor
DESCRIPTION ·High voltage and large current capacity ·Ultrahigh-speed switching ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation ·Complementary to 2SC4027
APPLICATIONS ·Converters , inverters and color TV audio output
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage
-160
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-1.5
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃ Collector Power Dissipation
@Ta=25℃
TJ
Junction Temperature
-2.5
A
15 W
1.