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2SA1552 Datasheet Silicon PNP Power Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·High voltage and large current capacity ·Ultrahigh-speed switching ·Small and slim package permitting ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·plementary to 2SC4027 APPLICATIONS ·Converters , inverters and color TV audio output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -1.5 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature -2.5 A 15 W 1.0 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA1552 isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A;

IB= -50mA VBE(sat) Base-Emitter Saturation Voltage IC= -0.5A;

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