Datasheet Details
| Part number | 2SA1930 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 73.04 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1930-InchangeSemiconductor.pdf |
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Overview: INCHANGE Semiconductor isc Silicon PNP Power Transistor.
| Part number | 2SA1930 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 73.04 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA1930-InchangeSemiconductor.pdf |
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·High Transition Frenquency : fT=200MHz(Typ.) ·Complementary to 2SC5171 APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications isc Product Specification 2SA1930 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -180 V VCEO Collector-Emitter Voltage -180 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2 A IB Base Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1 A 20 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1930 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A;
IB=- 0.1A VBE(on) Base-Emitter Voltage IC= -1A ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA1930 | PNP Transistor | Toshiba Semiconductor |
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2SA1930 | SILICON PNP TRANSISTOR | LZG |
| Part Number | Description |
|---|---|
| 2SA1939 | Power Transistor |
| 2SA1907 | Power Transistor |
| 2SA1908 | Power Transistor |
| 2SA1909 | Power Transistor |
| 2SA1940 | POWER TRANSISTOR |
| 2SA1941 | POWER TRANSISTOR |
| 2SA1942 | Power Transistor |
| 2SA1943 | POWER TRANSISTOR |
| 2SA1962 | POWER TRANSISTOR |
| 2SA1986 | Power Transistor |