2SA1930 Description
·High Transition Frenquency : IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.0A; IB=- 0.1A VBE(on) Base-Emitter Voltage IC= -1A.
- Part: 2SA1930
- Manufacturer: Inchange Semiconductor
- Size: 73.04 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SA1930 | PNP Transistor |
LZG |
2SA1930 | SILICON PNP TRANSISTOR |