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2SA1930
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA1930
Power Amplifier Applications Driver Stage Amplifier Applications
Unit: mm
• •
High transition frequency: fT = 200 MHz (typ.) Complementary to 2SC5171
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −180 −180 −5 −2 −1 2.0 20 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― SC-67 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.
2SA1930 Datasheet
