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2SA1962 - POWER TRANSISTOR

General Description

Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) Good Linearity of hFE Complement to Type 2SC5242 APPLICATIONS Power amplifier applications Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL P

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www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1962 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC5242 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature -1.5 A PC 130 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.