2SA1962 - Silicon PNP Transistor

Toshiba

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2SA1962 silicon pnp transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SA1962
Manufacturer	Toshiba
File Size	207.29 KB
Description	Silicon PNP Transistor
Datasheet	2SA1962 Datasheet

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1962 Power Amplifier Applications 2SA1962 Unit: mm • High breakdown voltage: VCEO = −230 V (min) • Complementary to 2SC5242 • Recommended for 80-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage V CBO −230 V Collector-emitter voltage V CEO −230 V Emitter-base voltage VEBO −5 V Collector current IC −15 A Base current IB −1.5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 130 W Tj 150 °C T stg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 4.7 g (typ.