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2SA1987 - Power Transistor

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Description

High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) Complement to Type 2SC5359 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications R

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Datasheet Details

Part number 2SA1987
Manufacturer Inchange Semiconductor
File Size 219.82 KB
Description Power Transistor
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isc Silicon PNP Power Transistor 2SA1987 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -230V(Min) ·Complement to Type 2SC5359 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -230 V VCEO Collector-Emitter Voltage -230 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.
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