Datasheet Details
| Part number | 2SA1988 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.46 KB |
| Description | Power Transistor |
| Datasheet | 2SA1988_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA1988 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 189.46 KB |
| Description | Power Transistor |
| Datasheet | 2SA1988_InchangeSemiconductor.pdf |
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·High Voltage ·TO-3P package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SA1988 is PNP silicon power transistor that designed for audio frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature -7 A 20 W 100 150 ℃ -55~150 ℃ INCHANGE Semiconductor 2SA1988 isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1988 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ;
IB= 0 VBE(on) Base-Emitter On Voltage IC= -500mA ;
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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2SA1988 | PNP SILICON TRANSISTOR | NEC |
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2SA1988 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SA1986 | Power Transistor |
| 2SA1987 | Power Transistor |
| 2SA1907 | Power Transistor |
| 2SA1908 | Power Transistor |
| 2SA1909 | Power Transistor |
| 2SA1930 | Silicon PNP Power Transistor |
| 2SA1939 | Power Transistor |
| 2SA1940 | POWER TRANSISTOR |
| 2SA1941 | POWER TRANSISTOR |
| 2SA1942 | Power Transistor |