High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -230V(Min)
Good Linearity of hFE
Complement to Type 2SC6011A
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for audio and general purpose applications
ABSOLUTE MAX
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isc Silicon PNP Power Transistor
2SA2151A
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -230V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-230
V
VCEO
Collector-Emitter Voltage
-230
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
-4
A
160
W
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc website： www.iscsemi.
2SA2151A Datasheet
