| Part number | 2SA649 |
|---|---|
| Datasheet | 2SA649_InchangeSemiconductor.pdf |
| File Size | 189.76 KB |
| Manufacturer | Inchange Semiconductor |
| Description | PNP Transistor |
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio power amplifier applications. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CBO Collector-Base Breakdown Voltage IC=...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
2SA649 | Silicon POwer Transistors | SavantIC |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| 2SA648 | PNP Transistor |
| 2SA626 | PNP Transistor |
| 2SA627 | PNP Transistor |
| 2SA633 | POWER TRANSISTOR |
| 2SA634 | POWER TRANSISTOR |
| 2SA636 | POWER TRANSISTOR |
| 2SA636A | POWER TRANSISTOR |
| 2SA650 | PNP Transistor |
| 2SA651 | Silicon PNP Transistor |
| 2SA652 | Silicon PNP Power Transistor |
