2SA649
2SA649 is PNP Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
- Wide Area of Safe Operation
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-150
VCEO Collector-Emitter Voltage
-150
VEBO
Emitter-Base Voltage
-5
Collector Current-Continuous
-7
Collector Current-Peak
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
-11
℃
Tstg
Storage Temperature
-55~150 ℃ isc website：.iscsemi....
