2SA738 Overview
·Collector-Emitter Breakdown Voltage- V(BR)CEO= -25V (Min) ·Good Linearity of hFE ·plement to Type 2SC1368 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as driver stages in high-fidelity amplifiers and TV circuits. 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
