Datasheet Details
| Part number | 2SA738 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.58 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA738_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA738 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 188.58 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA738_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- V(BR)CEO= -25V (Min) ·Good Linearity of hFE ·Complement to Type 2SC1368 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as driver stages in high-fidelity amplifiers and TV circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -25 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -2.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA738 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA738 | Silicon POwer Transistors | SavantIC |
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