Collector-Emitter Breakdown Voltage-
V(BR)CEO= -25V (Min)
Good Linearity of hFE
Complement to Type 2SC1368
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for use as driver stages in high-fidelity amplifiers
and TV ci
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isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
V(BR)CEO= -25V (Min) ·Good Linearity of hFE ·Complement to Type 2SC1368 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use as driver stages in high-fidelity amplifiers
and TV circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-25
V
VCEO Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-2.5
A
ICM
Collector Current-Peak
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
-3.0
A
8
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
2SA738
isc website：www.iscsemi.
2SA738 Datasheet
