2SA738 Description
Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-10mA; VCE=-5V 35 25 160 MIN -25 TYP. 2SA738 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT...