Datasheet Details
| Part number | 2SA764 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.64 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA764_InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA764 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 208.64 KB |
| Description | POWER TRANSISTOR |
| Datasheet | 2SA764_InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 4A ·Complement to Type 2SC1444 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -6 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA764 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA;
IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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2SA764 | Silicon POwer Transistors | SavantIC |
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