Datasheet Details
| Part number | 2SA843 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.82 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA843-InchangeSemiconductor.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | 2SA843 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 204.82 KB |
| Description | Silicon PNP Power Transistor |
| Datasheet | 2SA843-InchangeSemiconductor.pdf |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -2 A 20 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SA843 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA843 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA;
IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -0.5mA;
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