Download 2SA907 Datasheet PDF
Inchange Semiconductor
2SA907
DESCRIPTION - High Power Dissipation- : PC= 150W(Max.)@TC=25℃ - Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) - plement to Type 2SC1584 - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 VCEO Collector-Emitter Voltage -100 VEBO Emitter-Base Voltage -6 Collector Current-Continuous -15 Base Current-Continuous Collector Power Dissipation @TC=25℃ Tj Junction Temperature -5 ℃ Tstg Storage...